Vojkan S. Davidović

teaching assistant

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vojkan-davidovic

Academic career

  • Elected teaching assistant in 2012 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • PhD degree received in 2010 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Master degree received in 1996 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Bachelor degree received in 1990 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics

References

  • S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technol. & Radiation Protection, Vol. 26, 2011, No. 1, pp. 18-24.
  • N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović and Z. Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, Vol. 50, 2010, pp. 1278-1282.
  • V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Phyics., 2008, Vol. 47, pp. 6272-6276.
  • V. Davidović, D. N. Kouvatsos, N. Stojadinović, A.T. Voutsas, “Influence of Polysilicon Film Thickness on Radiation Response of Advanced Excimer Laser Annealed Polycristalline Silicon Thin Film Transistors”, Microelectronics Reliability, Vol. 47, 2007, pp. 1841-1845.
  • D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, “Negative Bias Temperature Instabilities in Sequentially Stressed and Annealed P-Channel Power VDMOSFETs”, Microelectronics Reliability, Vol. 47, 2007, pp. 1400-1405.
  • N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Effects of Electrical Stressing in Power VDMOSFETs” Microelectronics Reliability, vol. 45, 2005, pp. 115-122 (invited paper).
  • D.N. Kouvatsos, V. Davidović, G.J. Papaioannou, N. Stojadinović, L. Michalas, M. Exarchos, A.T. Voutsas, D. Goustouridis, “Effects of Hot Carrier and Irradiation Stresses on Advanced Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistors”, Microelectronics Reliability, Vol. 44, 2004, pp. 1631-1636.
  • N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Effects of High Electric Field and Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs”, Microelectronics Reliability, Vol. 42, 2002, pp. 669-677.
  • N. Stojadinović, S. Golubović, V. Davidović, S. Djorić-Veljković and S. Dimitrijev, Modeling Radiation-Induced Mobility Degradation in MOSFETs”, Physica Status Solidi (a), Vol. 169, 1998, pp. 63-66.
  • N. Stojadinović, S. Djorić, S. Golubović, and V. Davidović, “Separation of the Irradiation Induced Gate Oxide Charge and Interface Traps Effects in Power VDMOSFETs”, Electronics Letters, Vol. 30, 1994, pp. 1992-1993.

Activities

  • Total number of papers in journals with IMPACT factor: 24
  • Current involvement in projects: National: 2; International:
  • Other relevant information:

Contacts us

Address: Aleksandra Medvedeva 14, 18106 Niš

Phone: +381 (18) 529-105

Fax: +381 (18) 588-399

e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

PIB: 100232259

Account number: 840-1721666-89