Nebojša D. Janković

full professor

mail This email address is being protected from spambots. You need JavaScript enabled to view it.
tel 381 (18) 529-338
Nebojša Janković

Academic career

  • Elected full professor in 2001 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Doktorirao 1990 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Magistrirao 1982 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Diplomirao 1977 at the Faculty of Electrical Engineering in Niš, in the field of Telecommunications

References

  • N. Jankovic, T. Pesic , Dragan Pantic, Dynamic MAGFET model for sensors simulation IET Circuits, Devices & Systems, Vol. 1, No. 4, pp. 270-274, August 2007
  • N. Jankovic, T. Pesic , P. Igic, All Injection Level Power PiN Diode Model Including Temperature Dependance, Solid-State Electronics. Vol. 51, No. 5, pp.719-725, May 2007
  • N. Janković, T. Pesić, Modeling of Strained-Si/SiGe NMOS transistors including DC Self-Heating, Solid-State Electronics, vol. 50, No 3, pp 496-499, March 2006.
  • T. Pesic, N. Jankovic, A Compact Non-Quasi-Static MOSFET Model based on the Equivalent Non-Linear Transmission Line, IEEE Trans. Computer-Aided-Design Integrated Circ. Systems, vol. 27 No 10, October 2005.
  • N. Jankovic, T. Pesic, Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET, Solid-State Electronics, vol 49, No. 7 pp 1086-1089, July 2005.
  • N.D. Jankovic, A. O"Neill, 2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates, Solid-State Electronics, vol. 48, No. 2, pp. 225-230, 2004.
  • N.D. Jankovic, A. O"Neill, Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates, Solid-State Electronics, vol. 48, No. 2, pp. 277-284, 2004.
  • N. Jankovic, T. Pesic, J. Karamarkovic, 1D Physical Based Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis, Journal of Computational Electronics, vol. 3, pp. 13-25, 2004
  • N. Jankovic , G. Alastair Armstrong, Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers, Microelectronics Journal, Vol. 35, pp. 647-653, 2004

Activities

  • Total number of papers in journals with IMPACT factor: 20
  • Current involvement in projects: National: 2; International: 1
  • Other relevant information:

Contacts us

Address: Aleksandra Medvedeva 14, 18106 Niš

Phone: +381 (18) 529-105

Fax: +381 (18) 588-399

e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

PIB: 100232259

Account number: 840-1721666-89