Ivica Đ. Manić

assistant professor

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Ivica Manić

Academic career

  • Elected full professor in 2006 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics and Microsystems
  • PhD degree received in 2006 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics and Microsystems
  • Master degree received in 1991 at the Kanazawa Institute of Technology (Japan), in the field of Materials for Electronics
  • Bachelor degree received in 1985 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics

References

  • Aneta Prijić, Danijel Danković, Ljubomir Vračar, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Meas. Sci. Techn., Vol. 23, 2012, 085003 (pp. 8).
  • Ivica Manić, Elena Atanassova, Ninoslav Stojadinović, Dencho Spassov, Albena Paskaleva, “Hf-doped Ta2O5 stacks under constant voltage stress”, Microelectron. Engineering, Vol. 88, 2011, pp. 305-313.
  • Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions”, Microelectron. Reliab., Vol. 51, 2011, pp. 1540-1543.
  • Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectron. Reliab., Vol. 50, 2010, pp. 1278-1282
  • Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 49, 2009, pp. 1003-1007.
  • Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, Sima Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese J. Appl. Phys., Vol. 47, 2008, pp. 6272-6276.
  • Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 47, 2007, pp. 1400-1405.
  • Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 45, 2005, pp. 1343-1348.
  • Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Radiation Hardening of Power VDMOSFETs Using Electrical Stress”, Electronics Letters, Vol. 38, 2002, p.431.
  • Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs”, Microelectron. Reliab., Vol. 41, 2001, pp. 1373-1378.

Activities

  • Total number of papers in journals with IMPACT factor: 24
  • Current involvement in projects: National: 1; International: 1
  • Other relevant information:

Contacts us

Address: Aleksandra Medvedeva 14, 18106 Niš

Phone: +381 (18) 529-105

Fax: +381 (18) 588-399

e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

PIB: 100232259

Account number: 840-1721666-89