Goran S. Ristić

full professor

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Goran Ristić

Academic career

  • Elected full professor in 2004 at the Faculty of Electrical Engineering in Niš, in the field of Applied Physics
  • Doktorirao 1998 at the Faculty of Electrical Engineering in Niš, in the field of Semiconductor Physics
  • Magistrirao 1994 at the Faculty of Electrical Engineering in Niš, in the field of Semiconductor Physics
  • Diplomirao 1990 at the Faculty of Science in Niš, in the field of Physics

References

  • G.S. Ristić, "Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors", Journal of Physics D: Applied Physics, Topical Review, 41, pp. 023001 (19 pp) (2008)
  • G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress", Journal of Non-Crystalline Solid, 353, pp. 170-179 (2007)
  • G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252, pp. 3023-3032 (2006).
  • G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49 (7), pp. 1140-1152 (2005)
  • W. Zhao, G. Ristić, J. A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators”, Medical Physics, 31(9), pp. 2594-2605 (2004)
  • G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs”, Applied Surface Science, 220, pp. 181-185 (2003)
  • M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103 (2002)
  • M. M. Pejović, G. S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method", Journal of Physics D: Applied Physics, 33 (21), pp. 2786-2790 (2000)
  • G. S. Ristić, M. Pejović, A. Jakšić, “Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), pp. 2994-3000, 1998
  • G. Ristić, A. Jakšić, M. Pejović, “pMOS dosimetric transistors with two-layer gate oxide”, Sensors and Actuators: A. Physical, A 63, pp. 129-134, 1997

Activities

  • Total number of papers in journals with IMPACT factor: 46
  • Current involvement in projects: National: 1; International: 1
  • Other relevant information:

Contacts us

Address: Aleksandra Medvedeva 14, 18106 Niš

Phone: +381 (18) 529-105

Fax: +381 (18) 588-399

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PIB: 100232259

Account number: 840-1721666-89