Danijel M. Danković

teaching assistant

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Danijel Danković

Academic career

  • Elected teaching assistant in 2013 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics and Microsystems
  • PhD degree received in 2009 at the Faculty of Electrical Engineering in Niš, in the field of Nanotechnology and Microsystems
  • Master degree received in 2006 at the Faculty of Electrical Engineering in Niš, in the field of Microelectronics
  • Bachelor degree received in 2001 at the Faculty of Electrical Engineering in Niš, in the field of Electronics and Telecommunications

References

  • A. Prijić, D. Danković, Lj. Vračar, I. Manić, Z. Prijić and N. Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Measurement Science and Technology, vol.23, pp. 8 (2012), ISSN 0957-0233 (Print), 1361-6501 (Online), DOI: 10.1088/0957-0233/23/8/085003
  • I. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić and N. Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions”, Microelectronics Reliability, vol. 51, pp. 1540-1543 (2011), ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004
  • S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technology & Radiation Protection, vol. 26, No. 1, pp. 18-24 (2011), ISSN 1451-3994, DOI: 10.2298/NTRP1101018D
  • N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović and Z. Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, vol. 50, pp. 1278-1282 (2010), ISSN 0026-2714, DOI:10.1016/j.microrel.2010.07.122
  • I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, S. Golubović and N. Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 49, pp. 1003-1007 (2009), ISSN 0026-2714, DOI:10.1016/j.microrel.2009.07.010
  • D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović and N. Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 48, pp. 1313-1317 (2008), ISSN 0026-2714, DOI:10.1016/j.microrel.2008.06.015
  • V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković and S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Physics, vol. 47, pp. 6272-6276 (2008), ISSN 1347-4065 (online) 0021-4922 (print) DOI:10.1143/JJAP.47.6272
  • I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, “Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs”, IET Circuits, Devices & Systems, vol. 2, no. 2, pp. 213-221 (2008), ISSN 1751-858X, DOI:10.1049/iet-cds:20070173
  • D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović and N. Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 47, pp. 1400-1405 (2007), DOI:10.1016/j.microrel.2007.07.022
  • D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović and N. Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 46, pp. 1828-1833 (2006), ISSN 0026-2714, DOI:10.1016/j.microrel.2006.07.077

Activities

  • Total number of papers in journals with IMPACT factor: 16
  • Current involvement in projects: National: 2; International: 1
  • Other relevant information:

Contacts us

Address: Aleksandra Medvedeva 14, 18106 Niš

Phone: +381 (18) 529-105

Fax: +381 (18) 588-399

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PIB: 100232259

Account number: 840-1721666-89